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Gate Dielectrics and MOS ULSIs: Principles, Technologies and Applications (Springer Series in Electronics and Photonics), by Takashi Hori
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Gate Dielectrics focusses on dielectric films satisfying the superior quality gate dielectric even in large-scale integration. The information presented is rather up to date with regard to nanometer-range ultrathin gate-dielectric films, which are indispensible for submicrometer ULSIs.
- Sales Rank: #7218020 in Books
- Published on: 1997-01-01
- Original language: English
- Number of items: 1
- Dimensions: 9.25" h x .84" w x 6.10" l, 1.15 pounds
- Binding: Paperback
- 352 pages
From the Back Cover
Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.
Most helpful customer reviews
2 of 2 people found the following review helpful.
Excellent for beginer and manufacturer
By Buh, Gyoung-Ho
Very easy to understand. It helps to understande material science isuue in moden VLSI technique. It may useful for both academic student or researcher in industry. It covers the most important issues about gate dielectric from the fundamentals and historical review to state-of-art gate oxide technology. It will behepful to both academic and industry researcher.
1 of 1 people found the following review helpful.
Outstanding
By K. A. Shaw
A truly excellent summary of dielectric properties of SiO2 and nitrided oxides. The dielectric breakdown chapter is detailed, clear, and well thought-out. The references are useful and cover the literature well. Highly recommended.
Kevin A. Shaw, Ph.D.
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